Dangling-to-Interstitial Oxygen Transition and Its Modifications of the Electronic Structure in Few-Layer Phosphorene

• Published in: Journal of physical chemistry. C Vol. 124; no. 44; pp. 24066 - 24072
• Main Authors: Gómez-Pérez, Juan F, Correa, Julián D, Pravda, Cora Bartus, Kónya, Zoltán, Kukovecz, Ákos
• Format: Journal Article
• Language: English
• Published: American Chemical Society 05.11.2020
• Subjects: C: Energy Conversion and Storage; Energy and Charge Transport
• ISSN: 1932-7447; 1932-7455
• DOI: 10.1021/acs.jpcc.0c06542

In this work, oxidation processes are correlated with the current–voltage characteristics of few-layer black phosphorus obtained by liquid-phase exfoliation. Black phosphorous (BP), a room-temperature p-type semiconductor, exhibits an anomalous switching behavior between 373 and 448 K. The anomalous increase in electrical resistance is explained using a combined spectroscopic and DFT approach. The activation energy for thermally activated electrical conductance was calculated from the current–voltage characteristics and correlated with the oxidation processes. The activation energy for thermally activated electrical conductance in the dangling oxide BP phase was found to be 79.7 meV, ∼ 40 times lower than that in the interstitial counterpart. First-principles calculations reveal electronic differences between dangling and interstitial oxides, and electrical resistance measurements reveal a Schottky-to-ohmic contact formation related to the differences in the calculated work function of dangling and interstitial oxides. We propose that this phenomenon can be exploited as a fast, economical method for the evaluation of the oxidation processes in few-layer BP.