Realization of Thin Film Encapsulation by Atomic Layer Deposition of Al2O3 at Low Temperature

We investigated Al2O3 atomic layer deposition growth layer for encapsulation of organic light emitting diodes (OLEDs). It was found that surface properties of these O3-based Al2O3 were superior to those of H2O based Al2O3 grown at relative higher temperatures. Therefore, the water vapor transmission...

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Bibliographic Details
Published inJournal of physical chemistry. C Vol. 117; no. 39; pp. 20308 - 20312
Main Authors Yang, Yong-Qiang, Duan, Yu, Chen, Ping, Sun, Feng-Bo, Duan, Ya-Hui, Wang, Xiao, Yang, Dan
Format Journal Article
LanguageEnglish
Published Columbus, OH American Chemical Society 03.10.2013
Subjects
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Encapsulation
Atomic layer method
Thick film
Humidity
Organic light emitting diodes
Surface properties
Crystal growth from vapors
Water vapor
Thin film
Light emitting diode
Atomic layer epitaxial growth
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Summary:We investigated Al2O3 atomic layer deposition growth layer for encapsulation of organic light emitting diodes (OLEDs). It was found that surface properties of these O3-based Al2O3 were superior to those of H2O based Al2O3 grown at relative higher temperatures. Therefore, the water vapor transmission rate of ∼60 nm thick Al2O3 films can be reduced from 4.9 × 10–4 g/(m2 day) (80 °C–H2O) to 8.7 × 10–6 g/(m2 day) (80 °C–O3) under a controlled environment of 20 °C and relative humidity of 60%. Besides, the OLEDs integrated with 80 °C–O3 based Al2O3 film were undamaged, and their luminance decay time was altered to a considerable extent.
ISSN:1932-7447
1932-7455
DOI:10.1021/jp406738h