High Aspect Ratio PS‑b‑PMMA Block Copolymer Masks for Lithographic Applications

• Published in: ACS applied materials & interfaces Vol. 6; no. 23; pp. 21389 - 21396
• Main Authors: Ferrarese Lupi, F, Giammaria, T. J, Volpe, F. G, Lotto, F, Seguini, G, Pivac, B, Laus, M, Perego, M
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 10.12.2014
• Subjects: block copolymer; self-assembly; PS-b-PMMA; nanolithography; rapid thermal processing; high aspect-ratio
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/am506391n

The control of the self-assembly (SA) process and nanostructure orientation in diblock copolymer (DBC) thick films is a crucial technological issue. Perpendicular orientation of the nanostructures in symmetric and asymmetric poly­(styrene)-b-poly­(methyl methacrylate) (PS-b-PMMA) block copolymer films obtained by means of simple thermal treatments was demonstrated to occur in well-defined thickness windows featuring modest maximum values, thus resulting in low aspect ratio (h/d < 2) of the final lithographic mask. In this manuscript, the thickness window corresponding to the perpendicular orientation of the cylindrical structures in asymmetric DBC is investigated at high temperatures (190 °C ≤ T ≤ 310 °C) using a rapid thermal processing machine. A systematic study of the annealing conditions (temperature and time) of asymmetric PS-b-PMMA (M n = 67.1, polydispersity index = 1.09) films, with thicknesses ranging from 10 to 400 nm, allowed ordered patterns, with a maximum value of orientational correlation length of 350 nm, to be obtained for film thicknesses up to 200 nm. The complete propagation of the cylindrical structures through the whole film thickness in a high aspect ratio PS template (h/d ≈ 7) is probed by lift-off process. Si nanopillars are obtained having the same lateral ordering and characteristic dimensions of the DBC lithographic mask as further confirmed by grazing-incidence small-angle X-ray scattering experiments.