Thickness Limitation of Band-to-Band Tunneling Process in GaAsSb/InGaAs Type-II Tunnel Junctions Designed for Multi-Junction Solar Cells

• Published in: ACS applied energy materials Vol. 2; no. 2; pp. 1149 - 1154
• Main Authors: Louarn, K, Claveau, Y, Fontaine, C, Arnoult, A, Marigo-Lombart, L, Massiot, I, Piquemal, F, Bounouh, A, Cavassilas, N, Almuneau, G
• Format: Journal Article
• Language: English
• Published: American Chemical Society 25.02.2019
• Subjects: multi-junction solar cell; III−V semiconductors; gallium arsenide-based cells; epitaxy; tunnel junction
• ISSN: 2574-0962; 2574-0962
• DOI: 10.1021/acsaem.8b01700

This article reports on the impact of the thickness and/or the composition on the performance of type-II n+ InGaAs/p+ GaAsSb tunnel junctions. The InGaAs/GaAsSb staggered band-offset heterojunction is expected to improve tunneling properties. Devices have been grown by molecular beam epitaxy with various thicknesses and/or Sb and In concentrations. For thin elastically strained type-II tunnel junctions, the electrical characteristics exhibit degraded transport performances compared to the reference p+ GaAs/n+ GaAs tunnel junction structures, while much better tunneling peak currents are achieved with strain-relaxed thick type-II tunnel junctions. Based on a theoretical analysis of the local density of states and the band-edges profiles of the type-II tunnel junctions, we propose a suitable design for type-II tunnel junctions with high tunneling current density toward their use in multi-junction solar cells.