Silylcarborane Acrylate Nanoimprint Lithography Resists

The synthesis of a novel silylcarborane acrylate monomer is reported as well as its application as an etch-resistant component for the formulation of imprint layers for UV nanoimprint lithography (NIL). By introduction of 10% by weight of the silylcarborane acrylate monomer into NIL resist formulati...

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Bibliographic Details
Published inACS applied materials & interfaces Vol. 1; no. 9; pp. 1887 - 1892
Main Authors Simon, Yoan C, Moran, Isaac W, Carter, Kenneth R, Coughlin, E. Bryan
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 30.09.2009
Subjects
etch resistance
nanoimprint lithography
hybrid materials
lift-off
carboranes
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Summary:The synthesis of a novel silylcarborane acrylate monomer is reported as well as its application as an etch-resistant component for the formulation of imprint layers for UV nanoimprint lithography (NIL). By introduction of 10% by weight of the silylcarborane acrylate monomer into NIL resist formulations, the oxygen plasma etch rate of the resulting film was reduced by nearly a factor of 2. When used in NIL, the patterned resist layer had excellent oxygen plasma etch resistance, leading to effective image transfer to the underlying poly(hydroxyethyl methacrylate) lift-off layer. The latter allowed for the fabrication of metallic interdigitated electrode patterns via a NIL/lift-off process. This work demonstrates the robustness of silylcarborane-containing resists and paves the way for the investigation of new, high-resolution patterning methods.
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ISSN:1944-8244
1944-8252
DOI:10.1021/am9002292