Simultaneous Nitrogen Doping and Reduction of Graphene Oxide

• Published in: Journal of the American Chemical Society Vol. 131; no. 43; pp. 15939 - 15944
• Main Authors: Li, Xiaolin, Wang, Hailiang, Robinson, Joshua T, Sanchez, Hernan, Diankov, Georgi, Dai, Hongjie
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 04.11.2009
• ISSN: 0002-7863; 1520-5126; 1520-5126
• DOI: 10.1021/ja907098f

We developed a simple chemical method to obtain bulk quantities of N-doped, reduced graphene oxide (GO) sheets through thermal annealing of GO in ammonia. X-ray photoelectron spectroscopy (XPS) study of GO sheets annealed at various reaction temperatures reveals that N-doping occurs at a temperature as low as 300 °C, while the highest doping level of ∼5% N is achieved at 500 °C. N-doping is accompanied by the reduction of GO with decreases in oxygen levels from ∼28% in as-made GO down to ∼2% in 1100 °C NH3 reacted GO. XPS analysis of the N binding configurations of doped GO finds pyridinic N in the doped samples, with increased quaternary N (N that replaced the carbon atoms in the graphene plane) in GO annealed at higher temperatures (≥900 °C). Oxygen groups in GO were found responsible for reactions with NH3 and C−N bond formation. Prereduced GO with fewer oxygen groups by thermal annealing in H2 exhibits greatly reduced reactivity with NH3 and a lower N-doping level. Electrical measurements of individual GO sheet devices demonstrate that GO annealed in NH3 exhibits higher conductivity than those annealed in H2, suggesting more effective reduction of GO by annealing in NH3 than in H2, consistent with XPS data. The N-doped reduced GO shows clearly n-type electron doping behavior with the Dirac point (DP) at negative gate voltages in three terminal devices. Our method could lead to the synthesis of bulk amounts of N-doped, reduced GO sheets useful for various practical applications.