Generating an Etch Resistant “Resist” Layer from Common Solvents Using Scanning Probe Lithography in a Fluid Cell
A novel scanning probe lithography scheme is introduced involving the field-induced deposition of etch resistant material generated from common organic solvents such as n-octane, toluene, ethyl alcohol, and dioxane in the tip/sample gap region of a liquid cell. An NH4F/H2O2/H2O etchant transfers the...
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Published in | Nano letters Vol. 5; no. 2; pp. 321 - 324 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
United States
American Chemical Society
01.02.2005
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Subjects | |
Online Access | Get full text |
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Summary: | A novel scanning probe lithography scheme is introduced involving the field-induced deposition of etch resistant material generated from common organic solvents such as n-octane, toluene, ethyl alcohol, and dioxane in the tip/sample gap region of a liquid cell. An NH4F/H2O2/H2O etchant transfers these structures into 7 nm tall posts in a negative-tone fashion, indicating that an etch resistant, likely carbon-based material is produced by field-induced decomposition of the solvent. This is in sharp contrast to the positive tone images that result from a similar process involving water as the gap electrolyte followed by a similar fluorine-based etching. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-3 content type line 23 ObjectType-Undefined-2 |
ISSN: | 1530-6984 1530-6992 |
DOI: | 10.1021/nl048014g |