Generating an Etch Resistant “Resist” Layer from Common Solvents Using Scanning Probe Lithography in a Fluid Cell

A novel scanning probe lithography scheme is introduced involving the field-induced deposition of etch resistant material generated from common organic solvents such as n-octane, toluene, ethyl alcohol, and dioxane in the tip/sample gap region of a liquid cell. An NH4F/H2O2/H2O etchant transfers the...

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Bibliographic Details
Published inNano letters Vol. 5; no. 2; pp. 321 - 324
Main Authors Suez, Itai, Backer, Scott A, Fréchet, Jean M. J
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 01.02.2005
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Summary:A novel scanning probe lithography scheme is introduced involving the field-induced deposition of etch resistant material generated from common organic solvents such as n-octane, toluene, ethyl alcohol, and dioxane in the tip/sample gap region of a liquid cell. An NH4F/H2O2/H2O etchant transfers these structures into 7 nm tall posts in a negative-tone fashion, indicating that an etch resistant, likely carbon-based material is produced by field-induced decomposition of the solvent. This is in sharp contrast to the positive tone images that result from a similar process involving water as the gap electrolyte followed by a similar fluorine-based etching.
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ISSN:1530-6984
1530-6992
DOI:10.1021/nl048014g