Enhancing Perovskite Solar Cell Performance by Interface Engineering Using CH3NH3PbBr0.9I2.1 Quantum Dots

• Published in: Journal of the American Chemical Society Vol. 138; no. 27; pp. 8581 - 8587
• Main Authors: Cha, Mingyang, Da, Peimei, Wang, Jun, Wang, Weiyi, Chen, Zhanghai, Xiu, Faxian, Zheng, Gengfeng, Wang, Zhong-Sheng
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 13.07.2016
• ISSN: 0002-7863; 1520-5126
• DOI: 10.1021/jacs.6b04519

To improve the interfacial charge transfer that is crucial to the performance of perovskite solar cells, the interface engineering in a device should be rationally designed. Here we have developed an interface engineering method to tune the photovoltaic performance of planar-heterojunction perovskite solar cells by incorporating MAPbBr3–x I x (MA = CH3NH3) quantum dots (QDs) between the MAPbI3 perovskite film and the hole-transporting material (HTM) layer. By adjustment of the Br:I ratio, the as-synthesized MAPbBr3–x I x QDs show tunable fluorescence and band edge positions. When the valence band (VB) edge of MAPbBr3–x I x QDs is located below that of the MAPbI3 perovskite, the hole transfer from the MAPbI3 perovskite film to the HTM layer is hindered, and hence, the power conversion efficiency decreases. In contrast, when the VB edge of MAPbBr3–x I x QDs is located between the VB edge of the MAPbI3 perovskite film and the highest occupied molecular orbital of the HTM layer, the hole transfer from the MAPbI3 perovskite film to the HTM layer is well-facilitated, resulting in significant improvements in the fill factor, short-circuit photocurrent, and power conversion efficiency.