High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors

In this work, the operation of n- and p-type field-effect transistors (FETs) on the same WSe2 flake is realized,and a complementary logic inverter is demonstrated. The p-FET is fabricated by contacting WSe2 with a high work function metal, Pt, which facilities hole injection at the source contact. T...

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Published inACS nano Vol. 8; no. 5; pp. 4948 - 4953
Main Authors Tosun, Mahmut, Chuang, Steven, Fang, Hui, Sachid, Angada B, Hettick, Mark, Lin, Yongjing, Zeng, Yuping, Javey, Ali
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 27.05.2014
Subjects
digital circuits
transition metal dichalcogenides
complementary logic
monolayer semiconductors
CMOS electronics
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Summary:In this work, the operation of n- and p-type field-effect transistors (FETs) on the same WSe2 flake is realized,and a complementary logic inverter is demonstrated. The p-FET is fabricated by contacting WSe2 with a high work function metal, Pt, which facilities hole injection at the source contact. The n-FET is realized by utilizing selective surface charge transfer doping with potassium to form degenerately doped n+ contacts for electron injection. An ON/OFF current ratio of >104 is achieved for both n- and p-FETs with similar ON current densities. A dc voltage gain of >12 is measured for the complementary WSe2 inverter. This work presents an important advance toward realization of complementary logic devices based on layered chalcogenide semiconductors for electronic applications.
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ISSN:1936-0851
1936-086X
DOI:10.1021/nn5009929