Spontaneous Defect Annihilation in CH3NH3PbI3 Thin Films at Room Temperature Revealed by Time-Resolved Photoluminescence Spectroscopy
We utilized time-resolved photoluminescence (PL) spectroscopy to investigate the photocarrier recombination dynamics in CH3NH3PbI3 thin films as a function of the time elapsed from the film’s fabrication. We found that the PL lifetime gradually increased and began to level out once the age of the fi...
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Published in | The journal of physical chemistry letters Vol. 6; no. 3; pp. 482 - 486 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
United States
American Chemical Society
05.02.2015
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Subjects | |
Online Access | Get full text |
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Summary: | We utilized time-resolved photoluminescence (PL) spectroscopy to investigate the photocarrier recombination dynamics in CH3NH3PbI3 thin films as a function of the time elapsed from the film’s fabrication. We found that the PL lifetime gradually increased and began to level out once the age of the film reached ∼30 h. Even under weak excitation, the PL dynamics depended on the excitation intensity in the fresh sample, while the mature sample displayed no excitation-intensity dependence associated with the PL dynamics. We submit that this can be explained by the fact that a significant number of defects are initially formed in CH3NH3PbI3 thin films fabricated by the sequential method and are spontaneously reduced by room-temperature annealing. Our results provide important insights for reducing the nonradiative recombination centers, which improves the power conversion efficiency of perovskite solar cells. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1948-7185 1948-7185 |
DOI: | 10.1021/jz5026596 |