Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4

Large single crystals of SrIr4In2Ge4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of E g = 0.25(3) eV. It crystallizes in the tetragonal EuIr4In2Ge4 structure type with space group I4̅2m and unit cell parameters a...

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Published inInorganic chemistry Vol. 55; no. 23; pp. 12477 - 12481
Main Authors Calta, Nicholas P, Im, Jino, Fang, Lei, Chasapis, Thomas C, Bugaris, Daniel E, Chung, Duck Young, Kwok, Wai-Kwong, Kanatzidis, Mercouri G
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 05.12.2016
American Chemical Society (ACS)
Subjects
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY
MATERIALS SCIENCE
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Summary:Large single crystals of SrIr4In2Ge4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of E g = 0.25(3) eV. It crystallizes in the tetragonal EuIr4In2Ge4 structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) Å and c = 8.7120(9) Å. The electronic structure is very similar to both EuIr4In2Ge4 and the parent structure Ca3Ir4Ge4, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.
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National Science Foundation (NSF)
AC52-07NA27344; DMR-1121262; AC02-06CH11357
USDOE Office of Science (SC), Basic Energy Sciences (BES)
LLNL-JRNL-700098
ISSN:0020-1669
1520-510X
DOI:10.1021/acs.inorgchem.6b02617