Both Free and Trapped Carriers Contribute to Photocurrent of Sb2Se3 Solar Cells
Polycrystalline semiconductor films, such as methylammonium lead iodide, cadmium telluride, copper–indium–gallium selenide, etc., are being intensively studied because of their great potential for highly efficient and cost-effective solar cells. Among them, polycrystalline antimony chalcogenide film...
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Published in | The journal of physical chemistry letters Vol. 10; no. 17; pp. 4881 - 4887 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
United States
American Chemical Society
05.09.2019
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Subjects | |
Online Access | Get full text |
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Summary: | Polycrystalline semiconductor films, such as methylammonium lead iodide, cadmium telluride, copper–indium–gallium selenide, etc., are being intensively studied because of their great potential for highly efficient and cost-effective solar cells. Among them, polycrystalline antimony chalcogenide films are also promising for photovoltaic applications because they are nontoxic, stable, and flexible and have a suitable band gap. Considerable effort has already been devoted to improving the power conversion efficiency of antimony chalcogenide solar cells, but their efficiency still lingers below 10% due in part to scarce fundamental optoelectronic studies that help guide their development. Here, we use a combination of time-resolved terahertz and transient absorption spectroscopies to interrogate the optoelectronic behavior of antimony selenide thin films. By combining these two techniques we are able to monitor both free and trapped carrier dynamics and then evaluate their respective diffusion lengths. Our results indicate that trapped carriers remain mobile and can reach charge-collecting interfaces prior to recombination, and therefore, both free and trapped carriers can contribute to the photocurrent of antimony selenide solar cells. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 USDOE Office of Science (SC), Basic Energy Sciences (BES) AC36-08GO28308 NREL/JA-5900-72852 |
ISSN: | 1948-7185 1948-7185 |
DOI: | 10.1021/acs.jpclett.9b01817 |