Atomic Layer Deposition of Aluminum Oxide Thin Films from a Heteroleptic, Amidinate-Containing Precursor

• Published in: Chemistry of materials Vol. 20; no. 23; pp. 7287 - 7291
• Main Authors: Brazeau, Allison L, Barry, Seán T
• Format: Journal Article
• Language: English
• Published: American Chemical Society 09.12.2008
• Subjects: Chemical Vapor Deposition; Coatings, Thin films, and Monolayers; Precursor Routes to Materials (including Polymer-Derived Ceramics)
• ISSN: 0897-4756; 1520-5002
• DOI: 10.1021/cm802195b

A family of heteroleptic aluminum compounds were synthesized as potential precursors for aluminum oxide deposition by atomic layer deposition (ALD). The synthesis and thermal chemistry were considered in the context of precursor selection, and [MeC(NiPr)2]AlEt2 was selected as a precursor. It was used to deposit aluminum oxide with a high growth rate (2.3−2.7 Å/cycle) at 175 °C, and the films were found to be uniform and smooth (4.71 Å rms roughness).