Novel Synthesis of High Surface Area Silicon Carbide by RAPET (Reactions under Autogenic Pressure at Elevated Temperature) of Organosilanes
We report on a very simple, efficient, and economical synthetic technique that produces SiC of a high surface area, and under different conditions of a silicon carbide−carbon nanocomposite (SCCN) at a relatively low temperature. A high yield of pure products is obtained in a one-stage, single-precur...
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Published in | Chemistry of materials Vol. 17; no. 7; pp. 1797 - 1802 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
American Chemical Society
05.04.2005
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Online Access | Get full text |
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Summary: | We report on a very simple, efficient, and economical synthetic technique that produces SiC of a high surface area, and under different conditions of a silicon carbide−carbon nanocomposite (SCCN) at a relatively low temperature. A high yield of pure products is obtained in a one-stage, single-precursor reaction, without a catalyst. The cracking/dissociation of a triethylsilane precursor is carried out separately in a closed vessel cell (Swagelok) that was heated at 800 °C for 3 h, yielding SCCN, and at 1000 °C for 3 h, yielding SiC. This synthetic process is termed RAPET (Reactions under Autogenic Pressure at Elevated Temperature) process for the synthesis of nanomaterials. |
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Bibliography: | istex:EC4F9F9F01EA01357DE8D4537132F2367EA3761E ark:/67375/TPS-K69DXTD4-5 |
ISSN: | 0897-4756 1520-5002 |
DOI: | 10.1021/cm048032z |