Novel Synthesis of High Surface Area Silicon Carbide by RAPET (Reactions under Autogenic Pressure at Elevated Temperature) of Organosilanes

• Published in: Chemistry of materials Vol. 17; no. 7; pp. 1797 - 1802
• Main Authors: Pol, Vilas G, Pol, Swati V, Gedanken, Aharon
• Format: Journal Article
• Language: English
• Published: American Chemical Society 05.04.2005
• ISSN: 0897-4756; 1520-5002
• DOI: 10.1021/cm048032z

We report on a very simple, efficient, and economical synthetic technique that produces SiC of a high surface area, and under different conditions of a silicon carbide−carbon nanocomposite (SCCN) at a relatively low temperature. A high yield of pure products is obtained in a one-stage, single-precursor reaction, without a catalyst. The cracking/dissociation of a triethylsilane precursor is carried out separately in a closed vessel cell (Swagelok) that was heated at 800 °C for 3 h, yielding SCCN, and at 1000 °C for 3 h, yielding SiC. This synthetic process is termed RAPET (Reactions under Autogenic Pressure at Elevated Temperature) process for the synthesis of nanomaterials.