Programmed Band Gap Modulation within van der Waals Semiconductor Monolayers by Metalorganic Vapor-Phase Epitaxy

• Published in: Chemistry of materials Vol. 32; no. 12; pp. 5084 - 5090
• Main Authors: Lee, Chang-Soo, Jin, Gangtae, Seo, Seung-Young, Kim, Juho, Han, Cheolhee, Park, Min Yeong, Ahn, Heonsu, Lee, Suk-Ho, Cha, Soonyoung, Jo, Moon-Ho
• Format: Journal Article
• Language: English
• Published: American Chemical Society 23.06.2020

Programmed alloying within a van der Waals (vdW) semiconductor monolayer (ML) is achieved by metalorganic vapor-phase epitaxy. Specifically, two versions of on-ML alloying are demonstrated by precise controls of time-lapse vapor pressures during the single-crystalline WS2x Se2(1–x) ML growth, where...