Programmed Band Gap Modulation within van der Waals Semiconductor Monolayers by Metalorganic Vapor-Phase Epitaxy

Programmed alloying within a van der Waals (vdW) semiconductor monolayer (ML) is achieved by metalorganic vapor-phase epitaxy. Specifically, two versions of on-ML alloying are demonstrated by precise controls of time-lapse vapor pressures during the single-crystalline WS2x Se2(1–x) ML growth, where...

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Published inChemistry of materials Vol. 32; no. 12; pp. 5084 - 5090
Main Authors Lee, Chang-Soo, Jin, Gangtae, Seo, Seung-Young, Kim, Juho, Han, Cheolhee, Park, Min Yeong, Ahn, Heonsu, Lee, Suk-Ho, Cha, Soonyoung, Jo, Moon-Ho
Format Journal Article
LanguageEnglish
Published American Chemical Society 23.06.2020
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Summary:Programmed alloying within a van der Waals (vdW) semiconductor monolayer (ML) is achieved by metalorganic vapor-phase epitaxy. Specifically, two versions of on-ML alloying are demonstrated by precise controls of time-lapse vapor pressures during the single-crystalline WS2x Se2(1–x) ML growth, where the alloying degree, x, is either continuously or discretely directed on the MLs in the entire range of 0 ≤ x ≤ 1. With this, on-ML band gap modulation is accomplished in the forms of either graded or discrete intra-ML junctions, leading to atomically thin multispectral photodetectors by a spatially resolved manner at the nanoscales.
ISSN:0897-4756
1520-5002
DOI:10.1021/acs.chemmater.0c00949