Voltammetric and Force Spectroscopic Examination of Oxide Formation on Cu(111) in Basic Solution

Voltammetry and potential-dependent forces between a Si3N4 cantilever and a Cu(111) surface are used to probe the oxidation and reduction of this material in basic solution. In the anodic sweep, potential-dependent adhesive forces obtained from the cathodic limit to the first anodic peak indicate th...

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Bibliographic Details
Published inThe journal of physical chemistry. B Vol. 106; no. 47; pp. 12211 - 12220
Main Authors Kang, Myungchan, Gewirth, Andrew A
Format Journal Article
LanguageEnglish
Published American Chemical Society 28.11.2002
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Summary:Voltammetry and potential-dependent forces between a Si3N4 cantilever and a Cu(111) surface are used to probe the oxidation and reduction of this material in basic solution. In the anodic sweep, potential-dependent adhesive forces obtained from the cathodic limit to the first anodic peak indicate the occurrence of hydroxide adsorption at more negative potentials than the formation of Cu2O. The reactions through the Cu2O formation peak are diagnosed as competing scan-rate-dependent reactions that include the oxidation of Cu with both adsorbed OH- and solution OH-. The formation of Cu2O and soluble materials is evident from force measurements. The second anodic peak is associated with a two-electron-transfer reaction along with irreversible reactions producing soluble copper oxide species. The change of adhesive forces in the region of this peak indicates that Cu(OH)2 is formed first and converted to more stable CuO on the surface. Force and scan-rate-dependent voltammetric measurements indicate that the two cathodic peaks correspond to the combination of reduction of soluble and insoluble (adsorbed) copper species. CuOH is a likely intermediate in the final reduction to Cu metal on the cathodic scan. The combination of voltammetry and force spectroscopy provides new insights into the mechanism of the important Cu oxidation process.
Bibliography:istex:E4B6C141B2DCCBC17E444A128E836DE47E77D466
ark:/67375/TPS-G13ZN6J1-8
ISSN:1520-6106
1520-5207
DOI:10.1021/jp025882y