Improving the Radiative Efficiency of InGaN Quantum Dots via an Open Top Cavity

A self-aligned, highly tolerant “open top” cavity design is proposed and shown to enhance the spontaneous emission of InGaN quantum dots. Compared to the “closed top” counterpart, removing the metal cap, creating an “open top” cavity, enhances both the emission intensity and recombination rate. The...

Full description

Saved in:
Bibliographic Details
Published inACS photonics Vol. 4; no. 4; pp. 795 - 799
Main Authors Demory, Brandon, Katcher, Adam, Hill, Tyler, Teng, Chu-Hsiang, Zhang, Cheng, Guo, L. Jay, Deng, Hui, Ku, P. C
Format Journal Article
LanguageEnglish
Published American Chemical Society 19.04.2017
Subjects
plasmonic coupling
quantum dots
metallic cavity
site control
quantum efficiency
III-nitride
Online AccessGet full text

Cover

More Information
Summary:A self-aligned, highly tolerant “open top” cavity design is proposed and shown to enhance the spontaneous emission of InGaN quantum dots. Compared to the “closed top” counterpart, removing the metal cap, creating an “open top” cavity, enhances both the emission intensity and recombination rate. The localized surface plasmon resonance of the Ag “open top” cavity was matched to the InGaN quantum dots’ emission wavelength, resulting in an observed final emitter lifetime of 132 ps. The proposed cavity structure exhibits high cavity antenna quantum efficiency, can be self-aligned to the quantum dot, and has good tolerance to quantum dot emission wavelength, polarization, and processing variations.
ISSN:2330-4022
2330-4022
DOI:10.1021/acsphotonics.7b00140