Room-Temperature Observation of Trapped Exciton-Polariton Emission in GaN/AlGaN Microcavities with Air-Gap/III-Nitride Distributed Bragg Reflectors

We demonstrate trapped exciton-polariton emission at room temperature from nonpolar GaN/AlGaN cavities sandwiched between air/AlGaN distributed Bragg reflectors. Nanoscale thickness fluctuations characteristic to the nonpolar AlGaN cavity layer create deep potential traps, giving rise to a strong (i...

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Bibliographic Details
Published inACS photonics Vol. 3; no. 7; pp. 1182 - 1187
Main Authors Tao, Renchun, Kamide, Kenji, Arita, Munetaka, Kako, Satoshi, Arakawa, Yasuhiko
Format Journal Article
LanguageEnglish
Published American Chemical Society 20.07.2016
Subjects
room temperature
trapped exciton-polariton
GaN
air-gap DBR microcavity
III-nitrides
real-space pinhole
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Summary:We demonstrate trapped exciton-polariton emission at room temperature from nonpolar GaN/AlGaN cavities sandwiched between air/AlGaN distributed Bragg reflectors. Nanoscale thickness fluctuations characteristic to the nonpolar AlGaN cavity layer create deep potential traps, giving rise to a strong (in-plane) localization of exciton-polaritons. The observed quantized exciton-polariton states exhibit a large quantized energy of up to 6 meV, which benefits from the wide bandgap of III-nitrides. The experimental results are well explained by numerical simulations. III-Nitride exciton-polaritons in such deep traps will be useful for practical exciton-polariton lasers with high degrees of coherence and high-repetition rate Josephson oscillators with multicomponent condensates.
ISSN:2330-4022
2330-4022
DOI:10.1021/acsphotonics.6b00003