Room-Temperature Processed Nb2O5 as the Electron-Transporting Layer for Efficient Planar Perovskite Solar Cells

• Published in: ACS applied materials & interfaces Vol. 9; no. 27; pp. 23181 - 23188
• Main Authors: Ling, Xufeng, Yuan, Jianyu, Liu, Dongyang, Wang, Yongjie, Zhang, Yannan, Chen, Si, Wu, Haihua, Jin, Feng, Wu, Fupeng, Shi, Guozheng, Tang, Xun, Zheng, Jiawei, Liu, Shengzhong (Frank), Liu, Zhike, Ma, Wanli
• Format: Journal Article
• Language: English
• Published: American Chemical Society 12.07.2017
• Subjects: room-temperature; electron-transporting layer; Nb2O5; flexible; perovskite solar cells
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.7b05113

In this work, we demonstrate high-efficiency planar perovskite solar cells (PSCs), using room-temperature sputtered niobium oxide (Nb2O5) as the electron-transporting layer (ETL). Widely spread ETL-like TiO2 often requires high-temperature (>450 °C) sintering, which is not desired for the fabrication of flexible devices. The amorphous Nb2O5 (labeled as a-Nb2O5) ETL, without any heat treatment, can give a best power conversion efficiency (PCE) of 17.1% for planar PSCs. Interestingly, the crystalline Nb2O5 (labeled as c-Nb2O5), with high-temperature (500 °C) annealing, results in a very similar PCE of 17.2%, indicating the great advantage of a-Nb2O5 in energy saving. We thus carried out a systematical investigation on the properties of the a-Nb2O5 film. The Hall effect measurements indicate both high mobility and conductivity of the a-Nb2O5 film. Kelvin probe force microscopy measurements define the Fermi levels of a-Nb2O5 and c-Nb2O5 as −4.31 and −4.02 eV, respectively, which allow efficient electron extraction at the Nb2O5/perovskite interface, regardless of the additional heat treatment on Nb2O5 film. Benefitting from the low-temperature process, we further demonstrated flexible PSCs based on a-Nb2O5, with a considerable PCE of 12.1%. The room-temperature processing and relatively high device performance of a-Nb2O5 suggest a great potential for its application in optoelectrical devices.