Self-Templated Growth of Vertically Aligned 2H-1T MoS2 for Efficient Electrocatalytic Hydrogen Evolution
Semiconductor heterostructures of two-dimensional (2D) transition metal disulfide (TMD) have opened up approaches toward the integration of each function and implementations in novel energy and electronic devices. However, engineering TMD-based homostructures with tailored properties is still challe...
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Published in | ACS applied materials & interfaces Vol. 8; no. 46; pp. 31702 - 31708 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
American Chemical Society
23.11.2016
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Subjects | |
Online Access | Get full text |
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Summary: | Semiconductor heterostructures of two-dimensional (2D) transition metal disulfide (TMD) have opened up approaches toward the integration of each function and implementations in novel energy and electronic devices. However, engineering TMD-based homostructures with tailored properties is still challenging. Herein, we demonstrate a solution-processed growth of vertically aligned 1T-MoS2 using liquid-phase exfoliated 2H-MoS2 as self-templates. The unique MoS2-based homostructures not only provide more exposed active sites in the edge and basal plane for the electrocatalytic hydrogen evolution reaction (HER) but also improve the mass transfer due to the introduction of high packing porosity. The resultant all-MoS2 electrocatalysts with an integration of polymorphous MoS2 nanostructures exhibit a superior HER activity with a low potential of 203 mV at 10 mA cm–2, a small Tafel slope of 60 mV dec–1, and a remarkable cyclic stability. This work thus provides a simple and efficient route for the creation of unprecedented MoS2-based homostructured materials with exciting properties, especially as an inexpensive alternative to platinum catalysts in electrochemical hydrogen evolution production. |
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ISSN: | 1944-8244 1944-8252 |
DOI: | 10.1021/acsami.6b11298 |