ALD Heterojunction Ovonic Threshold Switches
Conformal atomic layer deposition (ALD) of chalcogenide films would enable aggressive 3D integration of nonvolatile memories; unfortunately, the fabrication of high-performance ALD OTSs remains an unsolved problem. Here we present an ALD process to incorporate As in a quaternary GeAsSeTe (GAST) film...
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Published in | ACS applied electronic materials Vol. 2; no. 12; pp. 3818 - 3824 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
American Chemical Society
22.12.2020
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Subjects | |
Online Access | Get full text |
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Summary: | Conformal atomic layer deposition (ALD) of chalcogenide films would enable aggressive 3D integration of nonvolatile memories; unfortunately, the fabrication of high-performance ALD OTSs remains an unsolved problem. Here we present an ALD process to incorporate As in a quaternary GeAsSeTe (GAST) film showing excellent conformality, controllable thickness, and composition homogeneity. The films were used to produce a GeSe/GAST heterojunction-OTS selector. We demonstrate low leakage current (∼10–9 A over a 0.01 μm2 area measured at VTH/2), a VTH ∼ 3 V, a switching time of ∼2 nsand an outstanding endurance exceeding 109 cycleson par with the current OTS state-of-the-art. |
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ISSN: | 2637-6113 2637-6113 |
DOI: | 10.1021/acsaelm.0c00666 |