ALD Heterojunction Ovonic Threshold Switches

Conformal atomic layer deposition (ALD) of chalcogenide films would enable aggressive 3D integration of nonvolatile memories; unfortunately, the fabrication of high-performance ALD OTSs remains an unsolved problem. Here we present an ALD process to incorporate As in a quaternary GeAsSeTe (GAST) film...

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Bibliographic Details
Published inACS applied electronic materials Vol. 2; no. 12; pp. 3818 - 3824
Main Authors Adinolfi, Valerio, Laudato, Mario, Clarke, Ryan, Jewhurst, Scott, McBriarty, Martin E, Hoang, Son, Narasimhan, Vijay K, Cheng, Lanxia, Littau, Karl A
Format Journal Article
LanguageEnglish
Published American Chemical Society 22.12.2020
Subjects
ALD
chalcogenide
PCM
NVM
OTS
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Summary:Conformal atomic layer deposition (ALD) of chalcogenide films would enable aggressive 3D integration of nonvolatile memories; unfortunately, the fabrication of high-performance ALD OTSs remains an unsolved problem. Here we present an ALD process to incorporate As in a quaternary GeAsSeTe (GAST) film showing excellent conformality, controllable thickness, and composition homogeneity. The films were used to produce a GeSe/GAST heterojunction-OTS selector. We demonstrate low leakage current (∼10–9 A over a 0.01 μm2 area measured at VTH/2), a VTH ∼ 3 V, a switching time of ∼2 nsand an outstanding endurance exceeding 109 cycleson par with the current OTS state-of-the-art.
ISSN:2637-6113
2637-6113
DOI:10.1021/acsaelm.0c00666