Mechanism and Equivalent Circuit Model of Multielement Metal-Oxide Thin-Film Photodetectors
In this paper, photodetector devices with a trilayer structure of p+-Si-substrate (p+-Si)/multielement metal-oxide thin film (MO)/indium tin oxide thin film (ITO) were built, and the associated possible mechanism was discussed. An equivalent circuit model for trilayer photodetectors based on the ban...
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Published in | ACS applied electronic materials Vol. 4; no. 1; pp. 424 - 431 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
American Chemical Society
25.01.2022
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Subjects | |
Online Access | Get full text |
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Summary: | In this paper, photodetector devices with a trilayer structure of p+-Si-substrate (p+-Si)/multielement metal-oxide thin film (MO)/indium tin oxide thin film (ITO) were built, and the associated possible mechanism was discussed. An equivalent circuit model for trilayer photodetectors based on the band structure and I–V characteristic was developed. The I–V characteristics and the equivalent circuit model of the photodetector based on the energy band structure were verified via HSPICE simulation and were investigated comprehensively. The accuracy of the simulation results was greater than 99%. This work paves the way for understanding the working mechanism as well as the potential application for optimizing device fabrication for multielement photodetectors. |
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ISSN: | 2637-6113 2637-6113 |
DOI: | 10.1021/acsaelm.1c01069 |