Magnetotransport in Co-Doped ZnO Nanowires

• Published in: Nano letters Vol. 9; no. 2; pp. 892 - 896
• Main Authors: Liang, Wenjie, Yuhas, Benjamin D, Yang, Peidong
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 01.02.2009
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in multilayers, nanoscale materials and structures; Exact sciences and technology; Magnetic properties and materials; Magnetic properties of nanostructures; Materials science; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Physics; Quantum wires; Conduction bands; Electronic conductivity; Doping; Indium additions; Low field; Weak localisation; Magnetic semiconductors; Fine structure; Electrical measurement; Electron mobility; Zinc oxide; Nanowires; Magnetoresistance; Carrier density; Nanostructured materials; Gates
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/nl8038184

Electrical and magnetotransport measurements were performed on individual Co-doped ZnO dilute magnetic semiconductor nanowires. The electron transport studies show that the electron mobility could be as high as 75 cm2/(V·s), and we observed positive magnetoresistivity (MR) at low magnetic field and negative MR at higher magnetic field. s−d exchange-induced spin splitting of the conduction band could account for positive MR while suppression of weak localization of impurity centers could account for the negative MR. Lowering the carrier concentration in these nanowires through the application of a gate voltage tends to induce a larger magnitude MR as well as additional fine structure in the MR curves.