Flexible High-Entropy Poly(vinyl alcohol) Dielectric Films Were Prepared at a Low Temperature and Applied to an Indium Gallium Zinc Oxide Thin-Film Transistor
In recent years, more and more attention has been paid to flexible thin-film transistors (TFTs). Therefore, we combined HfMgTiYZrO x high-entropy metal oxide and poly(vinyl alcohol) (PVA) organic material to prepare a flexible dielectric layer. We fabricated metal–insulator–metal (MIM) and TFT devi...
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Published in | The journal of physical chemistry letters Vol. 14; no. 41; pp. 9245 - 9249 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
American Chemical Society
19.10.2023
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Subjects | |
Online Access | Get full text |
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Summary: | In recent years, more and more attention has been paid to flexible thin-film transistors (TFTs). Therefore, we combined HfMgTiYZrO x high-entropy metal oxide and poly(vinyl alcohol) (PVA) organic material to prepare a flexible dielectric layer. We fabricated metal–insulator–metal (MIM) and TFT devices and carried out flexible tests. The test results show that the mixed dielectric layer attains a leakage current of 3.6 × 10–11 A under the bending radius of 5 mm. In the application of the TFT, the device still has good performance after 10 000 bends with a mobility of 3.1 cm2 V–1 s–1, an I on/I off of 1.4 × 107, a threshold voltage of 3.3 V, and a threshold swing of 0.20 V/decade. In addition, the average transmittance of the hybrid dielectric layer in the visible range is 90.8%. Therefore, high-entropy PVA hybrid films have high transparency, low leakage current, and good bending resistance and have broad application prospects in transparent and flexible devices. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1948-7185 1948-7185 |
DOI: | 10.1021/acs.jpclett.3c02462 |