Flexible High-Entropy Poly(vinyl alcohol) Dielectric Films Were Prepared at a Low Temperature and Applied to an Indium Gallium Zinc Oxide Thin-Film Transistor

• Published in: The journal of physical chemistry letters Vol. 14; no. 41; pp. 9245 - 9249
• Main Authors: Liang, Zhihao, Wu, Weijing, Fu, Xiao, Ning, Honglong, Xu, Wei, Xiong, Xin, Qiu, Tian, Luo, Cheng, Yao, Rihui, Peng, Junbiao
• Format: Journal Article
• Language: English
• Published: American Chemical Society 19.10.2023
• Subjects: Physical Insights into Materials and Molecular Properties
• ISSN: 1948-7185; 1948-7185
• DOI: 10.1021/acs.jpclett.3c02462

In recent years, more and more attention has been paid to flexible thin-film transistors (TFTs). Therefore, we combined HfMgTiYZrO x high-entropy metal oxide and poly­(vinyl alcohol) (PVA) organic material to prepare a flexible dielectric layer. We fabricated metal–insulator–metal (MIM) and TFT devices and carried out flexible tests. The test results show that the mixed dielectric layer attains a leakage current of 3.6 × 10–11 A under the bending radius of 5 mm. In the application of the TFT, the device still has good performance after 10 000 bends with a mobility of 3.1 cm2 V–1 s–1, an I on/I off of 1.4 × 107, a threshold voltage of 3.3 V, and a threshold swing of 0.20 V/decade. In addition, the average transmittance of the hybrid dielectric layer in the visible range is 90.8%. Therefore, high-entropy PVA hybrid films have high transparency, low leakage current, and good bending resistance and have broad application prospects in transparent and flexible devices.