Ripples, Strain, and Misfit Dislocations: Structure of Graphene–Boron Nitride Superlattice Interfaces

In recently synthesized two-dimensional superlattices of graphene and boron nitride, the atomic structure of the interface is complicated by a 2% lattice mismatch between the two materials. Using atomistic and continuum analysis, we show that the mismatch results in a competition between two strain-...

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Bibliographic Details
Published inNano letters Vol. 15; no. 3; pp. 1468 - 1475
Main Authors Nandwana, Dinkar, Ertekin, Elif
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 11.03.2015
Subjects
Atomic structure
Boron nitride
Dislocations
Graphene
Lattices
Nanostructure
Ripples
Superlattices
lattice relaxation
heteroepitaxy
interface structure
Graphene
hexagonal boron nitride
misfit dislocations
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Summary:In recently synthesized two-dimensional superlattices of graphene and boron nitride, the atomic structure of the interface is complicated by a 2% lattice mismatch between the two materials. Using atomistic and continuum analysis, we show that the mismatch results in a competition between two strain-relieving mechanisms: misfit dislocations and rippling. For flat superlattices, beyond a critical pitch the interface is decorated by strain-relieving misfit dislocations. For superlattices that can deform out-of-plane, optimal ripple wavelengths emerge.
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ISSN:1530-6984
1530-6992
DOI:10.1021/nl505005t