Probing the Growth Habit of Highly Single Crystalline Twinned V‑Shape RuO2 Nanowires by Polarized Raman Scattering

• Published in: Journal of physical chemistry. C Vol. 118; no. 35; pp. 20716 - 20720
• Main Authors: Shin, Hae-Young, Lee, Jaeyeon, Lee, Yumin, Jeong, Sewon, Jung, Hayoung, Yu, Hak Ki, Baik, Jeong Min, Kim, Myung Hwa, Yoon, Seokhyun
• Format: Journal Article
• Language: English
• Published: American Chemical Society 04.09.2014
• ISSN: 1932-7447; 1932-7455
• DOI: 10.1021/jp5069208

Polarized Raman scattering measurements have been carefully employed to explore the growth orientation and direction of a highly single crystalline twinned V-shaped ruthenium dioxide nanowire which were directly grown on a Si wafer with the thin SiO2 layer at 750 °C without any catalyst via a vapor phase transport process. Interestingly, the morphology of most of nanowires represents a well-defined twinned V-shape with a specific angle of approximately 52° between the two branches under a specific growth condition. We measured polarized Raman spectra of a single V-shaped nanowire and calculated the Raman intensity of RuO2 nanowire by considering a crystal coordinate. We observed that each branch of a V-shaped RuO2 nanowire grows into [001] direction, exactly consistent with the prediction of the growth direction by high resolution transmission electron microscopy (HRTEM).