In Situ Imaging of Ferroelastic Domain Dynamics in CsPbBr3 Perovskite Nanowires by Nanofocused Scanning X‑ray Diffraction

• Published in: ACS nano Vol. 14; no. 11; pp. 15973 - 15982
• Main Authors: Marçal, Lucas A. B, Oksenberg, Eitan, Dzhigaev, Dmitry, Hammarberg, Susanna, Rothman, Amnon, Björling, Alexander, Unger, Eva, Mikkelsen, Anders, Joselevich, Ernesto, Wallentin, Jesper
• Format: Journal Article
• Language: English
• Published: American Chemical Society 24.11.2020
• Subjects: X-ray diffraction; domains; CsPbBr3; perovskite; ferroelasticity; nanowires
• ISSN: 1936-0851; 1936-086X
• DOI: 10.1021/acsnano.0c07426

The interest in metal halide perovskites has grown as impressive results have been shown in solar cells, light emitting devices, and scintillators, but this class of materials have a complex crystal structure that is only partially understood. In particular, the dynamics of the nanoscale ferroelastic domains in metal halide perovskites remains difficult to study. An ideal in situ imaging method for ferroelastic domains requires a challenging combination of high spatial resolution and long penetration depth. Here, we demonstrate in situ temperature-dependent imaging of ferroelastic domains in a single nanowire of metal halide perovskite, CsPbBr3. Scanning X-ray diffraction with a 60 nm beam was used to retrieve local structural properties for temperatures up to 140 °C. We observed a single Bragg peak at room temperature, but at 80 °C, four new Bragg peaks appeared, originating in different real-space domains. The domains were arranged in periodic stripes in the center and with a hatched pattern close to the edges. Reciprocal space mapping at 80 °C was used to quantify the local strain and lattice tilts, revealing the ferroelastic nature of the domains. The domains display a partial stability to further temperature changes. Our results show the dynamics of nanoscale ferroelastic domain formation within a single-crystal perovskite nanostructure, which is important both for the fundamental understanding of these materials and for the development of perovskite-based devices.