Structural and Electronic Response of Multigap N‑Doped In2Se3: A Prototypical Material for Broad Spectral Optical Devices

• Published in: ACS applied materials & interfaces Vol. 16; no. 37; pp. 49902 - 49912
• Main Authors: Rodrigues-Fontenele, Guilherme, Fontenele, Gabriel, Valentim, Mirela R., Freitas, Luisa V. C., Rodrigues-Junior, Gilberto, Magalhães-Paniago, Rogério, Malachias, Angelo
• Format: Journal Article
• Language: English
• Published: American Chemical Society 18.09.2024
• Subjects: Surfaces, Interfaces, and Applications; n-doping system; scanning tunneling spectroscopy; layered semiconductors; crystal truncation rod; indium selenide
• ISSN: 1944-8244; 1944-8252; 1944-8252
• DOI: 10.1021/acsami.4c08610

The production of controlled doping in two-dimensional semiconductor materials is a challenging issue when introducing these systems into current and future technology. In some compounds, the coexistence of distinct crystallographic phases for a fixed composition introduces an additional degree of complexity for synthesis, chemical stability, and potential applications. In this work, we demonstrate that a multiphase In2Se3 layered semiconductor system, synthesized with three distinct structuresrhombohedral α and β-In2Se3 and trigonal δ-In2Se3exhibits chemical stability and well-behaved n-type doping. Scanning tunneling spectroscopy measurements reveal variations in the local electronic density of states among the In2Se3 structures, resulting in a compound system with electronic bandgaps that range from infrared to visible light. These characteristics make the layered In2Se3 system a promising candidate for multigap or broad spectral optical devices, such as detectors and solar cells. The ability to tune the electronic properties of In2Se3 through structural phase manipulation makes it ideal for integration into flexible electronics and the development of heterostructures with other materials.