Ultralow-Power Circuit and Sensing Applications Based on Subthermionic Threshold Switching Transistors

• Published in: ACS nano Vol. 18; no. 44; pp. 30497 - 30511
• Main Authors: Devnath, Anupom, Bae, Junseong, Alimkhanuly, Batyrbek, Lee, Gisung, Lee, Seunghyun, Kadyrov, Arman, Patil, Shubham, Lee, Dr Seunghyun
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 05.11.2024
• Subjects: logic inverter; IGZO; energy-efficient; low SS; amplifier circuit; threshold-switching FET; photodetector

The most recent breakthrough in state-of-the-art electronics and optoelectronics involves the adoption of steep-slope field-effect transistors (FETs), promoting sub-60 mV/dec subthreshold swing (SS) at ambient temperature, effectively overcoming “Boltzmann limit” to minimize power consumption. Here,...