Combined BEM/FEM substrate resistance modeling

For present-day micro-electronic designs, it is becoming ever more important to accurately model substrate coupling effects. Basically, either a Finite Element Method (FEM) or a Boundary Element Method (BEM) can be used. The FEM is the most versatile and flexible whereas the BEM is faster, but requi...

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Bibliographic Details
Published inAnnual ACM IEEE Design Automation Conference: Proceedings of the 39th conference on Design automation : New Orleans, Louisiana, USA; 10-14 June 2002 pp. 771 - 776
Main Authors Schrik, E., Meijs, N. P. van der
Format Conference Proceeding
LanguageEnglish
Published New York, NY, USA ACM 10.06.2002
SeriesACM Conferences
Subjects
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Summary:For present-day micro-electronic designs, it is becoming ever more important to accurately model substrate coupling effects. Basically, either a Finite Element Method (FEM) or a Boundary Element Method (BEM) can be used. The FEM is the most versatile and flexible whereas the BEM is faster, but requires a stratified, layout-independent doping profile for the substrate. Thus, the BEM is unable to properly model any specific, layout-dependent doping patterns that are usually present in the top layers of the substrate, such as channel stop layers. This paper describes a way to incorporate these doping patterns into our substrate model by combining a BEM for the stratified doping profiles with a 2D FEM for the top-level, layout-dependent doping patterns, thereby achieving improved flexibility compared to BEM and improved speed compared to FEM. The method has been implemented in the SPACE layout to circuit extractor and it has been successfully verified with two other tools.
Bibliography:SourceType-Conference Papers & Proceedings-1
ObjectType-Conference Paper-1
content type line 25
ISBN:1581134614
9781581134612
ISSN:0738-100X
DOI:10.1145/513918.514111