Pulsed Laser-Deposited MoS2 Thin Films on W and Si: Field Emission and Photoresponse Studies

• Published in: ACS applied materials & interfaces Vol. 6; no. 18; pp. 15881 - 15888
• Main Authors: Late, Dattatray J, Shaikh, Parvez A, Khare, Ruchita, Kashid, Ranjit V, Chaudhary, Minakshi, More, Mahendra A, Ogale, Satishchandra B
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 24.09.2014
• Subjects: thin film; photodiode heterostructures; MoS2; pulsed laser deposition; field emission
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/am503464h

We report field electron emission investigations on pulsed laser-deposited molybdenum disulfide (MoS2) thin films on W-tip and Si substrates. In both cases, under the chosen growth conditions, the dry process of pulsed laser deposition (PLD) is seen to render a dense nanostructured morphology of MoS2, which is important for local electric field enhancement in field emission application. In the case of the MoS2 film on silicon (Si), the turn-on field required to draw an emission current density of 10 μA/cm2 is found to be 2.8 V/μm. Interestingly, the MoS2 film on a tungsten (W) tip emitter delivers a large emission current density of ∼30 mA/cm2 at a relatively lower applied voltage of ∼3.8 kV. Thus, the PLD-MoS2 can be utilized for various field emission-based applications. We also report our results of photodiode-like behavior in (n- and p- type) Si/PLD-MoS2 heterostructures. Finally we show that MoS2 films deposited on flexible kapton substrate show a good photoresponse and recovery. Our investigations thus hold great promise for the development of PLD MoS2 films in application domains such as field emitters and heterostructures for novel nanoelectronic devices.