Hyperthermal Oxidation of Si(100)2×1 Surfaces: Effect of Growth Temperature

• Published in: Journal of physical chemistry. C Vol. 116; no. 15; pp. 8649 - 8656
• Main Authors: Khalilov, U, Pourtois, G, van Duin, A. C. T, Neyts, E. C
• Format: Journal Article
• Language: English
• Published: American Chemical Society 19.04.2012
• ISSN: 1932-7447; 1932-7455
• DOI: 10.1021/jp300506g

Using reactive molecular dynamics simulations based on the ReaxFF potential, we studied the growth mechanism of ultrathin silica (SiO2) layers during hyperthermal oxidation as a function of temperature in the range 100–1300 K. Oxidation of Si(100){2 × 1} surfaces by both atomic and molecular oxygen was investigated for hyperthermal impact energies in the range of 1 to 5 eV. Two different growth mechanisms are found, corresponding to a low temperature oxidation and a high temperature one. The transition temperature between these mechanisms is estimated to be about 700 K. Also, the initial step of the Si oxidation process is analyzed in detail. Where possible, we validated our results with experimental and ab initio data, and good agreement was obtained. This study is important for the fabrication of silica-based devices in the micro- and nanoelectronics industry and, more specifically, for the fabrication of metal–oxide semiconductor devices.