Ce(IV) Complexes with Donor-Functionalized Alkoxide Ligands: Improved Precursors for Chemical Vapor Deposition of CeO2

• Published in: Inorganic chemistry Vol. 50; no. 22; pp. 11644 - 11652
• Main Authors: Aspinall, Helen C, Bacsa, John, Jones, Anthony C, Wrench, Jacqueline S, Black, Kate, Chalker, Paul R, King, Peter J, Marshall, Paul, Werner, Matthew, Davies, Hywel O, Odedra, Rajesh
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 21.11.2011
• ISSN: 0020-1669; 1520-510X
• DOI: 10.1021/ic201593s

Thin films of ceria (CeO2) have many applications, and their synthesis by liquid-injection MOCVD (metal–organic chemical vapor deposition) or ALD (atomic layer deposition) requires volatile precursor compounds. Here we report the synthesis of a series of homoleptic and heteroleptic Ce(IV) complexes with donor-functionalized alkoxide ligands mmp (1-methoxy-2-methylpropan-2-olate), dmap (1-(dimethylamino)propan-2-olate), and dmop (2-(4,4-dimethyl-4,5-dihydrooxazol-2-yl)propan-2-olate) and their potential as precursors for MOCVD and ALD of CeO2. New complexes were synthesized by alcohol exchange reactions with [Ce(OBut)4]. [Ce(mmp)4] and [Ce(dmap)4] were both found to be excellent precursors for liquid-injection MOCVD of CeO2, depositing high purity thin films with very low carbon contamination, and both have a large temperature window for diffusion controlled growth (350–600 °C for [Ce(mmp)4]; 300–600 °C for [Ce(dmap)4]). [Ce(mmp)4] is also an excellent precursor for liquid-injection ALD of CeO2 using H2O as oxygen source and demonstrates self-limiting growth from 150 to 350 °C. [Ce(dmap)4] has lower thermal stability than [Ce(mmp)4] and does not show self-limiting growth in ALD. Heteroleptic complexes show a tendency to undergo ligand redistribution reactions to form mixtures in solution and are unsuitable as precursors for liquid-injection CVD.