Understanding Phase-Change Behaviors of Carbon-Doped Ge2Sb2Te5 for Phase-Change Memory Application

• Published in: ACS applied materials & interfaces Vol. 6; no. 16; pp. 14207 - 14214
• Main Authors: Zhou, Xilin, Xia, Mengjiao, Rao, Feng, Wu, Liangcai, Li, Xianbin, Song, Zhitang, Feng, Songlin, Sun, Hongbo
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 27.08.2014
• Subjects: C doping; microstructure; molecular dynamic simulations; finite-element modeling; phase-change material; Ge2Sb2Te5
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/am503502q

Phase-change materials are highly promising for next-generation nonvolatile data storage technology. The pronounced effects of C doping on structural and electrical phase-change behaviors of Ge2Sb2Te5 material are investigated at the atomic level by combining experiments and ab initio molecular dynamics. C dopants are found to fundamentally affect the amorphous structure of Ge2Sb2Te5 by altering the local environments of Ge–Te tetrahedral units with stable C–C chains. The incorporated C increases the amorphous stability due to the enhanced covalent nature of the material with larger tetrahedral Ge sites. The four-membered rings with alternating atoms are reduced greatly with carbon addition, leading to sluggish phase transition and confined crystal grains. The lower RESET power is presented in the PCM cells with carbon-doped material, benefiting from its high resistivity and low thermal conductivity.