One-Dimensional/Two-Dimensional/Three-Dimensional Dual Heterostructure Based on MoS2‑Modified ZnO-Heterojunction Diode with Silicon

• Published in: Journal of physical chemistry. C Vol. 123; no. 36; pp. 21941 - 21949
• Main Authors: Patel, Meswa, Pataniya, Pratik, Vala, Hitesh, Sumesh, C. K
• Format: Journal Article
• Language: English
• Published: American Chemical Society 12.09.2019
• ISSN: 1932-7447; 1932-7455
• DOI: 10.1021/acs.jpcc.9b05134

Two-dimensional (2D) transition-metal dichalcogenides and their composites with metal oxides showed promising applications for visible-light responsive photocatalysis. In this work, we have synthesized optically tunable MoS2·ZnO heterostructure to cover the longer wavelength range in the visible-light region. The optical band gap tuning of the wide band gap ZnO from 3.23 to 2.91 eV is successfully achieved via chemical exfoliation and microwave-assisted synthesis route using MoS2 nanosheets. The synthetic heterostructured MoS2·ZnO was prepared to fabricate Si/MoS2·ZnO heterojunction diode, which exhibits diodelike characteristics with an excellent photoresponse behavior. A photoresponsivity of 212.2 mA/W, detectivity of 1.3 × 1010 Jones, and response time of 200 ms was measured upon irradiation of 20 mW/cm2 at a bias voltage of −2 V. The overall results show that they have potential for large area preparation of optoelectronic and photovoltaic devices.