Plasmonic–Photonic Interference Coupling in Submicrometer Amorphous TiO2–Ag Nanoarchitectures

In this study, we report the crystallinity effects of submicrometer titanium dioxide (TiO2) nanotube (TNT) incorporated with silver (Ag) nanoparticles (NPs) on surface-enhanced Raman scattering (SERS) sensitivity. Furthermore, we demonstrate the SERS behaviors dependent on the plasmonic–photonic int...

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Bibliographic Details
Published inLangmuir Vol. 33; no. 43; pp. 12398 - 12403
Main Authors Hyam, Rajeshkumar S, Jeon, Jihoon, Chae, Songhwa, Park, Yong Tae, Kim, Sung Jae, Lee, Byeongchan, Lee, Choongyeop, Choi, Dukhyun
Format Journal Article
LanguageEnglish
Published American Chemical Society 31.10.2017
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Summary:In this study, we report the crystallinity effects of submicrometer titanium dioxide (TiO2) nanotube (TNT) incorporated with silver (Ag) nanoparticles (NPs) on surface-enhanced Raman scattering (SERS) sensitivity. Furthermore, we demonstrate the SERS behaviors dependent on the plasmonic–photonic interference coupling (P-PIC) in the TNT-AgNP nanoarchitectures. Amorphous TNTs (A-TNTs) are synthesized through a two-step anodization on titanium (Ti) substrate, and crystalline TNTs (C-TNTs) are then prepared by using thermal annealing process at 500 °C in air. After thermally evaporating 20 nm thick Ag on TNTs, we investigate SERS signals according to the crystallinity and P-PIC on our TNT-AgNP nanostructures. (A-TNTs)-AgNP substrates show dramatically enhanced SERS performance as compared to (C-TNTs)-AgNP substrates. We attribute the high enhancement on (A-TNTs)-AgNP substrates with electron confinement at the interface between A-TNTs and AgNPs as due to the high interfacial barrier resistance caused by band edge positions. Moreover, the TNT length variation in (A-TNTs)-AgNP nanostructures results in different constructive or destructive interference patterns, which in turn affects the P-PIC. Finally, we could understand the significant dependency of SERS intensity on P-PIC in (A-TNTs)-AgNP nanostructures. Our results thus might provide a suitable design for a myriad of applications of enhanced EM on plasmonic-integrated devices.
ISSN:0743-7463
1520-5827
DOI:10.1021/acs.langmuir.7b01080