Fast Thermodynamic Study on a Silicon Nanotransistor at Cryogenic Temperatures

• Published in: Nano letters Vol. 24; no. 29; pp. 8859 - 8865
• Main Authors: Zhang, Yangbo, Guan, Hao, Sheng, Tingfeng, Chen, Ruiwen, Rogge, Sven, Du, Jiangfeng, Yin, Chunming
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 24.07.2024
• Subjects: silicon nanotransistor; quantum electronics; radio frequency reflectometry; thermometry; cryogenic temperatures
• ISSN: 1530-6984; 1530-6992; 1530-6992
• DOI: 10.1021/acs.nanolett.4c01424

Cryogenic temperatures are crucial for the operation of semiconductor quantum electronic devices, yet the heating effects induced by microwave or laser signals used for quantum state manipulation can lead to significant temperature variations at the nanoscale. Therefore, probing the temperature of individual devices in working conditions and understanding the thermodynamics are paramount for designing and operating large-scale quantum computing systems. In this study, we demonstrate high-sensitivity fast thermometry in a silicon nanotransistor at cryogenic temperatures using RF reflectometry. Through this method, we explore the thermodynamic processes of the nanotransistor during and after a laser pulse and determine the dominant heat dissipation channels in the few-kelvin temperature range. These insights are important to understand thermal budgets in quantum circuits, with our techniques being compatible with microwave and laser radiation, offering a versatile approach for studying other quantum electronic devices in working conditions.