Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf0.5Zr0.5O2 Thin Films

• Published in: ACS applied materials & interfaces Vol. 15; no. 36; pp. 42764 - 42773
• Main Authors: Wang, Yuchen, Liu, Si, Luo, Zhen, Gan, Hui, Wang, He, Li, Jiachen, Du, Xinzhe, Zhao, Haoyu, Shen, Shengchun, Yin, Yuewei, Li, Xiaoguang
• Format: Journal Article
• Language: English
• Published: American Chemical Society 13.09.2023
• Subjects: Functional Inorganic Materials and Devices; charge redistribution; Hf0.5Zr0.5O2 ferroelectric film; ferroelectric field-effect transistor; ultralow subthreshold swing; ferroelectric switching
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.3c08163

The emergence of complementary metal–oxide semiconductor (CMOS)-compatible HfO2-based ferroelectric materials provides a promising way to achieve ferroelectric field-effect transistors (FeFETs) with a steep subthreshold swing (SS) reduced to below the Boltzmann thermodynamics limit (∼60 mV/dec at room temperature), which has important implications for lowering power consumption. In this work, a metal–oxide-semiconductor field-effect transistor (MOSFET) is connected with Hf0.5Zr0.5O2 (HZO)-based ferroelectric capacitors with different capacitances. By adjusting the capacitance of ferroelectric capacitors, an ultralow SS of ∼0.34 mV/dec in HfO2-based FeFETs can be achieved. More interestingly, by designing the sweeping voltage sequences, the SS can be adjusted to be 0 mV/dec with the drain current ranging over six orders of magnitude, and the threshold voltage for turning on the MOSFET can be further reduced. The manipulated SS could be attributed to the evolution of ferroelectric switching. Our work contributes to understanding the origin of ultralow SS in ferroelectric MOSFETs and the realization of low-power devices.