Synergistic Effect of Hybrid CdSe Nanobelt/PbI2 Flake Heterojunction Toward Drastic Performance Flexible Photodetectors

• Published in: ACS applied materials & interfaces Vol. 15; no. 11; pp. 14715 - 14726
• Main Authors: Nawaz, Muhammad Zubair, Xu, Liu, Zhou, Xin, Javed, Muhammad, Wang, Jiale, Wu, Binhe, Wang, Chunrui
• Format: Journal Article
• Language: English
• Published: American Chemical Society 22.03.2023
• Subjects: Functional Nanostructured Materials (including low-D carbon); long-term environmental stability; flexible photodetectors; hybrid heterojunction; CdSe nanobelt; PbI2 flake
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.2c22219

Despite numerous studies on broadband photodetectors, the problematic query that remains unaddressed is the limited photoresponsivity while broadening the spectral regime. Here, for the first time, a rational design of a hybrid 1D CdSe nanobelt/2D PbI2 flake heterojunction device is constructed, which substantially boosts the photocurrent while significantly attenuating the dark current, resulting in improved photodetector figures-of-merit. Thanks to the excellent quality of the nanobelt/flake and built-in electric field at the CdSe/PbI2 interface heterojunction, photogenerated carriers are promptly segregated and more photoexcitons are accumulated by the respective electrodes, enabling a high responsivity of ∼106 A/W, making this one of the highest values among similar reported hybrid heterojunction photodetectors, together with a large linear dynamic range, superior sensitivity, excellent detectivity and external quantum efficiency, an ultrafast response, and a broadband spectral response range. The similar 1D/2D hybrid heterojunction device architecture assembled on the flexible polyimide tape substrate exhibits excellent folding endurance and mechanical, flexural, and long-term environmental stability. The present device architecture and robust operational stability in an ambient environment reveals that the combination of the present 1D/2D hybrid heterojunction has incredible potential for future flexible photoelectronic devices.