Photothermal Control of Helicity-Dependent Current in Epitaxial Sb2Te2Se Topological Insulator Thin-Films at Ambient Temperature

• Published in: ACS applied materials & interfaces Vol. 14; no. 7; pp. 9909 - 9916
• Main Authors: Roy, Samrat, Manna, Subhadip, Mitra, Chiranjib, Pal, Bipul
• Format: Journal Article
• Language: English
• Published: American Chemical Society 23.02.2022
• Subjects: Surfaces, Interfaces, and Applications; topological insulator; helicity-dependent photocurrent; photon drag; photothermal gradient; photogalvanic effect
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.1c24461

Optical control of helicity-dependent photocurrent in topological insulator (TI) Sb2Te2Se has been studied at room temperature on epitaxial thin-films grown by pulsed laser deposition (PLD). Comparison with a theoretical model, which fits the data very well, reveals different contributions to the measured photocurrent. Study of the dependence of photocurrent on the angle of incidence (wave-vector) of the excitation light with respect to the sample normal helps to identify the origin of different components of the photocurrent. Enhancement and inversion of the photocurrent in the presence of the photothermal gradient for light incident on two opposite edges of the sample occur due to selective spin-state excitation with two opposite circularly polarized lights in the presence of the unique spin-momentum locked surface states. These observations render the PLD-grown epitaxial TI thin-films promising for optoelectronic devices such as sensors, switches, and actuators whose response can be controlled by polarization as well as the angle of incidence of light under ambient conditions. The polarization response can also be tuned by the photothermal effect by suitably positioning the incident light beam on the device.