Environmental-Friendly Ag2S QD-Multilayer MoSe2 van Der Waals Heterostructure for High-Performance Broadband Photodetection

• Published in: ACS applied materials & interfaces Vol. 16; no. 16; pp. 20734 - 20743
• Main Authors: Shi, Yaru, Liu, Mingxiu, Zou, Yuting, Li, Yahui, Zhao, Xingyu, An, Junru, Che, Mengqi, Tan, Fan, Sun, Xiaojuan, Li, Dabing, Li, Shaojuan
• Format: Journal Article
• Language: English
• Published: American Chemical Society 24.04.2024
• Subjects: Functional Inorganic Materials and Devices; high-performance broadband photodetection; Ag2S quantum dots; van der waals heterostructure; MoSe2; photodetector
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.4c00129

Broadband photodetectors have drawn intensive attention owing to their wide application prospects in optical communication, imaging, astronomy, and so on. Two-dimensional transition-metal dichalcogenides (TMDs) are considered as highly potential candidates for photodetection applications, benefiting from their excellent photoelectric properties. However, most of the photodetectors based on TMDs suffer from low performance in the near-infrared (NIR) region due to the weak optical absorption efficiency near their absorption band edge, which severely constrains their usage for broadband optoelectronics. Here, by taking advantage of the high absorption coefficient and environment-friendly property of Ag2S quantum dots (QDs), the hybrid of multilayer MoSe2/Ag2S QDs is demonstrated with a high-performance broadband photodetection capability (532–1270 nm). The favorable energy band alignment of MoSe2/Ag2S QDs facilitates effective separation and collection of photogenerated carriers, and the heterostructure device exhibits significant enhancement of performance compared to the bare MoSe2 device. High responsivity, detectivity, and external quantum efficiency of 25.5 A/W, 1.45 × 1011 Jones, and 1070% are obtained at a low working voltage of 1 V under 980 nm illumination. The responsivity of the device can reach up to 1.2 A/W at 1270 nm wavelength, which is competitive to the commercial NIR photodetectors. Meanwhile, broadband imaging capability is demonstrated. Our work may open up a facile and eco-friendly approach to construct high-performance broadband photodetectors for next-generation compact optoelectronic applications.