Synthesis of SnO 2 ‐ZnO Core‐Shell Nanowires and Their Optoelectronic Properties

• Published in: Journal of nanomaterials Vol. 2012; no. 1
• Main Authors: Pan, Ko-Ying, Lin, Yu-Hung, Lee, Po-Sheng, Wu, Jyh-Ming, Shih, Han C.
• Format: Journal Article
• Language: English
• Published: 2012
• ISSN: 1687-4110; 1687-4129
• DOI: 10.1155/2012/279245

Zinc oxides deposited on Tin dioxide nanowires have been successfully synthesized by atomic layer deposition (ALD). The diameter of SnO 2 ‐ZnO core‐shell nanowires is 100 nm by ALD 200 cycles. The result of electricity measurements shows that the resistance of SnO 2 ‐ZnO core‐shell nanowires (ALD: 200 cycles) is 925 Ω, which is much lower than pure SnO 2 nanowires (3.6 × 10 6 Ω). The result of UV light test shows that the recovery time of SnO 2 ‐ZnO core‐shell nanowires (ALD: 200 cycles) is 328 seconds, which is lower than pure SnO 2 nanowires (938 seconds). These results demonstrated that the SnO 2 ‐ZnO core‐shell nanowires have potential application as UV photodetectors with high photon‐sensing properties.