Minute-Scale Degradation and Shift of Valence-Band Maxima of (CH3NH3)SnI3 and HC(NH2)2SnI3 Perovskites upon Air Exposure

The development of lead-free, tin-based perovskite solar cells is becoming a pervasive topic; however, the inherent instabilities of such cells have prevented a boost of their power conversion efficiency and a deeper understanding of their fundamental properties. By using the photoelectron yield spe...

Full description

Saved in:
Bibliographic Details
Published inJournal of physical chemistry. C Vol. 121; no. 36; pp. 19650 - 19656
Main Authors Nishikubo, Ryosuke, Ishida, Naoki, Katsuki, Yukie, Wakamiya, Atsushi, Saeki, Akinori
Format Journal Article
LanguageEnglish
Published American Chemical Society 14.09.2017
Online AccessGet full text

Cover

Loading…
More Information
Summary:The development of lead-free, tin-based perovskite solar cells is becoming a pervasive topic; however, the inherent instabilities of such cells have prevented a boost of their power conversion efficiency and a deeper understanding of their fundamental properties. By using the photoelectron yield spectroscopy (PYS) and flash-photolysis time-resolved microwave conductivity (TRMC) techniques, we investigate the effects of air exposure on the valence-band maxima (VBMs) and photoconductivities of tin iodide perovskites (methylammonium cation, MASnI3; formamidinium cation, FASnI3). These perovskites exhibit a shift of the VBM (e.g., from −5.02 eV at 0 min to −5.17 eV at 18 min), deterioration of the PYS profiles, and progressive decrease of the TRMC transients on the minute scale of air exposure. The addition of SnF2 was found to suppress the initial defect-related density of the filled electronic states of MASnI3 and FASnI3, as revealed by PYS, and to partly mitigate the degradation of MASnI3, as revealed by TRMC. A low-dimensional perovskite (MA2SnI6) composed of the oxidized form of Sn­(IV) was also evaluated to explain the anomalous TRMC behavior of the air-exposed MASnI3. Our results provide an important basis for correlation with the degradation and energetics of a device.
ISSN:1932-7447
1932-7455
DOI:10.1021/acs.jpcc.7b06294