Disentangling Structural and Electronic Properties in V2O3 Thin Films: A Genuine Nonsymmetry Breaking Mott Transition

• Published in: Nano letters Vol. 22; no. 14; pp. 5990 - 5996
• Main Authors: Mazzola, Federico, Chaluvadi, Sandeep Kumar, Polewczyk, Vincent, Mondal, Debashis, Fujii, Jun, Rajak, Piu, Islam, Mahabul, Ciancio, Regina, Barba, Luisa, Fabrizio, Michele, Rossi, Giorgio, Orgiani, Pasquale, Vobornik, Ivana
• Format: Journal Article
• Language: English
• Published: American Chemical Society 27.07.2022
• Subjects: Mott transition; Metal−insulator transition; V2O3; ARPES
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/acs.nanolett.2c02288

Phase transitions are key in determining and controlling the quantum properties of correlated materials. Here, by using the combination of material synthesis and photoelectron spectroscopy, we demonstrate a genuine Mott transition undressed of any symmetry breaking side effects in the thin films of V2O3. In particular and in contrast with the bulk V2O3, we unveil the purely electronic dynamics approaching the metal–insulator transition, disentangled from the structural transformation that is prevented by the residual substrate-induced strain. On approaching the transition, the spectral signal evolves slowly over a wide temperature range, the Fermi wave-vector does not change, and the critical temperature is lower than the one reported for the bulk. Our findings are fundamental in demonstrating the universal benchmarks of a genuine nonsymmetry breaking Mott transition, extendable to a large array of correlated quantum systems, and hold promise of exploiting the metal–insulator transition by implementing V2O3 thin films in devices.