High H– Conductivities along the ab-Planes of La2LiHO3 Epitaxial Thin Films

• Published in: Crystal growth & design Vol. 23; no. 10; pp. 7103 - 7108
• Main Authors: Sasahara, Yuki, Hirose, Takashi, Yoshimoto, Masataka, Matsui, Naoki, Kobayashi, Shigeru, Ubukata, Hiroki, Takeiri, Fumitaka, Suzuki, Kota, Hirayama, Masaaki, Nishio, Kazunori, Shimizu, Ryota, Kanno, Ryoji, Kobayashi, Genki, Hitosugi, Taro
• Format: Journal Article
• Language: English
• Published: American Chemical Society 04.10.2023
• ISSN: 1528-7483; 1528-7505
• DOI: 10.1021/acs.cgd.3c00376

We report the formation of La2LiHO3 epitaxial thin films and the high H– conductivities in the ab-planes of the crystals. Single-phase La2LiHO3 (001) epitaxial thin films are fabricated on LaSrAlO4 (001) single-crystal substrates via pulsed laser deposition. The H– conductivity in the ab-plane (1.3 × 10–8 S cm–1) at room temperature (22 °C) is four orders of magnitude higher than those of bulk polycrystals, and furthermore, the activation energy (0.46 eV) is less than 2/3 of those of bulk polycrystals. This study reveals the intrinsic intragrain H– conductivity of La2LiHO3. Moreover, the results suggest that the H– conductivities of bulk polycrystals can be substantially enhanced by controlling the properties of the grains and aligning the orientations of the crystallites.