Angle-Resolved Polarized Raman Spectra of Linear MoS2 Nanostructures for Optical Anisotropy Detection

The linear molybdenum disulfide (MoS2) with different nanostructures due to atomic arrangements is expected to show promising prospects in the next generation electronics and optoelectronic devices. In this work, three typical linear MoS2 nanostructures were grown on the SiO2/Si (285 nm, 500 μm) sub...

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Published inACS applied nano materials Vol. 6; no. 13; pp. 11299 - 11308
Main Authors Yang, Ming-Ming, Liu, Yi, Cong, Ri-Dong, Zhang, Yong, Zhang, Yu-Fan, Tan, Li, Hu, Xiao-Wen, Wu, Chun-Lin, Liu, Yan-Liang, Dang, Wei, Liu, Xiao-Yu, Zhao, Xiao-Hui, Liang, Bao-Lai, Yu, Wei, Li, Xiao-Li
Format Journal Article
LanguageEnglish
Published American Chemical Society 14.07.2023
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Summary:The linear molybdenum disulfide (MoS2) with different nanostructures due to atomic arrangements is expected to show promising prospects in the next generation electronics and optoelectronic devices. In this work, three typical linear MoS2 nanostructures were grown on the SiO2/Si (285 nm, 500 μm) substrate by a modified chemical vapor deposition (CVD) method and were systematically analyzed by using angle-resolved polarized (ARP) Raman spectra. The results are as follows. The first and the second linear MoS2 are identified as nanoribbon-like structures with a tiled layered arrangement similar with the sheet MoS2, where the first linear MoS2 is grown directly on the substrate and the second linear MoS2 is coated on the upper surface of the cylindrical-shaped molybdenum oxide (MoO3). The third linear MoS2 is a nanotube-like structure, and its atomic structure includes vertical layered arrangement in addition. All three linear MoS2 produce a small-size effect, and the second linear MoS2 is more like an intermediate material between the first linear MoS2 and the third linear MoS2 during the growth of CVD. This study provides an effective approach to detect the optical anisotropy of linear nanostructures of two-dimensional materials which has potential applications in ARP optoelectronics devices.
ISSN:2574-0970
2574-0970
DOI:10.1021/acsanm.3c01321