Vertically Aligned Graphene-Like SnS2 Ultrathin Nanosheet Arrays: Excellent Energy Storage, Catalysis, Photoconduction, and Field-Emitting Performances

New layered SnS2 nanosheet arrays consisting of 1–5 atomic layers were synthesized directly on Sn foil as both the tin source and the metal current collector substrates by a simple biomolecule-assisted method. It is found that SnS2 nanosheets synthesized have excellent photoelectric applications, su...

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Bibliographic Details
Published inJournal of physical chemistry. C Vol. 116; no. 16; pp. 9319 - 9326
Main Authors Zhong, Haoxiang, Yang, Gongzheng, Song, Huawei, Liao, Qingyu, Cui, Hao, Shen, Peikang, Wang, Cheng-Xin
Format Journal Article
LanguageEnglish
Japanese
Published American Chemical Society 26.04.2012
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Summary:New layered SnS2 nanosheet arrays consisting of 1–5 atomic layers were synthesized directly on Sn foil as both the tin source and the metal current collector substrates by a simple biomolecule-assisted method. It is found that SnS2 nanosheets synthesized have excellent photoelectric applications, such as on lithium ion batteries, and photocatalytic, field emission, and photoconductive properties. Cyclic voltammetry and discharge and charge behaviors of the atomic SnS2 nanosheets were examined, and it shows that the average discharge capacity in 1050 mAh/g is much larger than the theoretical capacity at the 1C rate. The photocatalytic action driven by solar light is quite quick, and the degradation rate of RhB is 90%, only irradiated for 20 min when the content of SnS2 nanosheets is 0.4 g/L. The response of the SnS2 device to the incidence UV light is very fast and shows excellent photosensitivity and stability. In addition, field emission properties of SnS2 nanosheets were also researched, and we found that the turn-on field for SnS2 is 6.9 V/μm, which lowered ever reported values. The enhanced photoelectric properties are likely to originate in a graphene-like structure. Thus, graphene-like SnS2 materials are promising candidates in the photoelectric field.
ISSN:1932-7447
1932-7455
DOI:10.1021/jp301024d