Validation of van der Waals Interface for Enhanced Resistive Switching Performance in Memristor by Using Topotactic Phase Transition Material

This study examines the impact of the contact interface on metal/oxide/metal memristors using SrFeO x (SFO) as the oxide layer. Two methods were used to prepare the Au top electrode: electron beam evaporation and a transfer process. The transfer process was found to reduce oxygen ion migration at th...

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Bibliographic Details
Published inACS applied electronic materials Vol. 6; no. 9; pp. 6338 - 6343
Main Authors Su, Rui, Deng, Yuheng, Jiang, Weichao, Duan, Yufeng, Zhang, Runqing, Xiao, Ruizi, Shen, Chenglin, Gong, Mingxing, Cheng, Weiming, Xu, Jingping, Lai, Peter To, Miao, Xiangshui
Format Journal Article
LanguageEnglish
Published American Chemical Society 24.09.2024
Subjects
topotactic phase transition
oxygen migration
electrode transfer
image recognition
memristor
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Summary:This study examines the impact of the contact interface on metal/oxide/metal memristors using SrFeO x (SFO) as the oxide layer. Two methods were used to prepare the Au top electrode: electron beam evaporation and a transfer process. The transfer process was found to reduce oxygen ion migration at the Au/SFO interface by eliminating surface damage caused by gold atoms during evaporation. As a result, the memristor’s ON/OFF current ratio improved from 25 to 4000, and resistance dispersion decreased from 32.4% to 3.8%. The memristor also achieved 91.5% accuracy in the VGG16 network for CIFAR-10 image recognition.
ISSN:2637-6113
2637-6113
DOI:10.1021/acsaelm.4c01309