Validation of van der Waals Interface for Enhanced Resistive Switching Performance in Memristor by Using Topotactic Phase Transition Material
This study examines the impact of the contact interface on metal/oxide/metal memristors using SrFeO x (SFO) as the oxide layer. Two methods were used to prepare the Au top electrode: electron beam evaporation and a transfer process. The transfer process was found to reduce oxygen ion migration at th...
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Published in | ACS applied electronic materials Vol. 6; no. 9; pp. 6338 - 6343 |
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Main Authors | , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
American Chemical Society
24.09.2024
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Subjects | |
Online Access | Get full text |
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Summary: | This study examines the impact of the contact interface on metal/oxide/metal memristors using SrFeO x (SFO) as the oxide layer. Two methods were used to prepare the Au top electrode: electron beam evaporation and a transfer process. The transfer process was found to reduce oxygen ion migration at the Au/SFO interface by eliminating surface damage caused by gold atoms during evaporation. As a result, the memristor’s ON/OFF current ratio improved from 25 to 4000, and resistance dispersion decreased from 32.4% to 3.8%. The memristor also achieved 91.5% accuracy in the VGG16 network for CIFAR-10 image recognition. |
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ISSN: | 2637-6113 2637-6113 |
DOI: | 10.1021/acsaelm.4c01309 |