Multilevel Resistance Switching Memory in La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O3‑0.3PbTiO3 (011) Heterostructure by Combined Straintronics-Spintronics

• Published in: ACS applied materials & interfaces Vol. 8; no. 8; pp. 5424 - 5431
• Main Authors: Zhou, Weiping, Xiong, Yuanqiang, Zhang, Zhengming, Wang, Dunhui, Tan, Weishi, Cao, Qingqi, Qian, Zhenghong, Du, Youwei
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 02.03.2016
• Subjects: spintronics; nonvolatile; straintronics; multilevel memory; heterostructure; resistance switching
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.5b11392

We demonstrate a memory device with multifield switchable multilevel states at room temperature based on the integration of straintronics and spintronics in a La2/3Ba1/3MnO3/0.7Pb­(Mg1/3Nb2/3)­O3-0.3PbTiO3 (PMN–PT) (011) heterostructure. By precisely controlling the electric field applied on the PMN–PT substrate, multiple nonvolatile resistance states can be generated in La2/3Ba1/3MnO3 films, which can be ascribed to the strain-modulated metal–insulator transition and phase separation of Manganite. Furthermore, because of the strong coupling between spin and charge degrees of freedom, the resistance of the La2/3Ba1/3MnO3 film can be readily modulated by magnetic field over a broad temperature range. Therefore, by combining electroresistance and magnetoresistance effects, multilevel resistance states with excellent retention and endurance properties can be achieved at room temperature with the coactions of electric and magnetic fields. The incorporation of ferroelastic strain and magnetic and resistive properties in memory cells suggests a promising approach for multistate, high-density, and low-power consumption electronic memory devices.